PBSS4350SS,115 datasheet

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• Маркировка
  PBSS4350SS,115
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors PBSS4350SS,115 Current - Collector (ic) (max): 2.7A Current - Collector Cutoff (max): 100nA Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V Frequency - Transition: - Mounting Type: Surface Mount Package / Case: 8-SOIC (3.9mm Width) Power - Max: 750mW Series: - Transistor Type: 2 NPN (Dual) Vce Saturation (max) @ Ib, Ic: 80mV @ 50mA, 500mA Voltage - Collector Emitter Breakdown (max): 50V Product Category: Transistors Bipolar - BJT RoHS: yes Configuration: Dual Transistor Polarity: NPN Collector- Base Voltage VCBO: 50 V Collector- Emitter Voltage VCEO Max: 50 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 2.7 A DC Collector/Base Gain hfe Min: 300 at 100 mA at 2 V, 300 at 500 mA at 2 V, 300 at 1 A at 2 V, 200 at 2 A at 2 V, 120 at 2.7 A at 2 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT DC Current Gain hFE Max: 300 at 100 mA at 2 V Maximum Power Dissipation: 2000 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Part # Aliases: PBSS4350SS T/R Other Names: 934061031115, PBSS4350SS T/R
• Количество страниц
  14 шт.
• Формат
  PDF

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• Размер файла
  102,13 KB

PBSS4350SS,115 datasheet скачать

PBSS4350SS,115 datasheet